<button id="ylg2w"></button>
    1. <span id="ylg2w"></span>

      <tbody id="ylg2w"></tbody>

      <button id="ylg2w"></button>
      <button id="ylg2w"></button>
      <dd id="ylg2w"><noscript id="ylg2w"></noscript></dd><em id="ylg2w"><acronym id="ylg2w"></acronym></em>

      產品型號:NSU4N60

      產品介紹

       

      Main Product Characteristics 

      V(BR)DSS

      600V

      RDS(ON)

      1.9Ω(typ.)

      ID

      4A

       

      Features and Benefits 

      ? Turbo HV MOSFET process technology.

      ? Low on-resistance and low gate charge.

      ? Outstanding lightning characteristics.

      ? Fast switching and reverse body recovery.

      ? High ruggedness and robustness.

       

       

      Description 


      The TP series products utilizes Tengxin’s turbo HV MOSFET techniques to achieve ultral low on- resistance and low gate charge. These features make this series products extremely efficient and reliable for use in power management, lighting, adapter and a wide variety of other applications.

       

      Absolute Maximum Ratings (TC=25°C unless otherwise specified)

      Parameter 

      Symbol 

      Max. 

      Unit 

      Drain-Source Voltage

      VDSS

      600

      V

      Gate-Source Voltage

      VGSS

      ±30

      V

       

      Continuous Drain Current

      TC = 25°C

       

      ID

      5

      A

      TC = 100°C

      3.1

      A

      Pulsed Drain Current1

      IDM

      20

      A

      Single Pulsed Avalanche Energy2

      EAS

      242

      mJ

      Power Dissipation

      TC = 25°C

      PD

      40

      W

      Thermal Resistance, Junction to Case

      RθJC

      3.2

      °C/W

      Thermal Resistance, Junction to Ambient

      RθJA

      120

      °C/W

      Operating and Storage Temperature Range

      TJ, TSTG

      -55 to +150

      °C

       

      Electrical Characteristics (TC=25°C unless otherwise specified)

      Parameter 

      Symbol 

      Test Condition 

      Min. 

      Typ. 

      Max. 

      Unit 

      Off Characteristic 

      Drain-Source Breakdown Voltage

      V(BR)DSS

      VGS= 0V, ID= 250μA

      600

      -

      -

      V

       

      Zero Gate Voltage Drain Current

       

      IDSS

      VDS= 600V, VGS= 0V, TJ= 25°C

       

      -

       

      -

       

      1

       

      μA

      Gate to Body Leakage Current

      IGSS

      VGS= ±30V

      -

      -

      ±100

      nA

      On Characteristics 

      Gate Threshold Voltage

      VGS(th)

      VDS=VGS, ID= 250μA

      2

      -

      4

      V

      Static Drain-Source On-Resistance3

      RDS(on)

      VGS= 10V, ID= 1A

      -

      1.9

      2.5

      ?

      Dynamic Characteristics 

      Input Capacitance

      Ciss

       

      VDS= 25V, VGS= 0V, f= 1.0MHz

      -

      479.8

      -

      pF

      Output Capacitance

      Coss

      -

      62.7

      -

      pF

      Reverse Transfer Capacitance

      Crss

      -

      2.1

      -

      pF

      Total Gate Charge

      Qg

       

      VDD= 480V, ID= 2A, VGS= 10V

      -

      9.67

      -

      nC

      Gate-Source Charge

      Qgs

      -

      2.74

      -

      nC

      Gate-Drain(“Miller”) Charge

      Qgd

      -

      3.39

      -

      nC

      Switching Characteristics 

      Turn-On Delay Time

      td(on)

       

      VDD= 300V, ID= 2A, RG= 25?,VGS=10V

      -

      14.8

      -

      nS

      Turn-On Rise Time

      tr

      -

      28.4

      -

      nS

      Turn-Off Delay Time

      td(off)

      -

      38.3

      -

      nS

      Turn-Off Fall Time

      tf

      -

      21.1

      -

      nS

      Drain-Source Diode Characteristics and Maximum Ratings 

      Maximum Continuous Drain to Source Diode Forward Current

       

      IS

       

       

      -

       

      -

       

      5

       

      A

      Maximum Pulsed Drain to Source Diode Forward Current

       

      ISM

       

      -

       

      -

       

      20

       

      A

      Drain to Source Diode Forward Voltage

       

      VSD

      VGS= 0V, ISD= 2A, TJ= 25°C

       

      -

       

      -

       

      1.4

       

      V

      Reverse Recovery Time

      trr

      VGS= 0V, IS= 2A,

      di/dt= 100A/μS

      -

      399

      -

      nS

      Reverse Recovery Charge

      Qrr

      -

      2.2

      -

      μC

      Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

      2. IAS = 3.78A, L=30mH,VDD = 70V, RG = 25?, Starting TJ = 25°C

      3. Pulse Test: Pulse width ≤ 300μS, Duty Cycle ≤ 1%

       

      Typical Electrical and Thermal Characteristic Curves 



       

      Test Circuit & Waveform 

      Package Outline Dimensions TO-220F 


       

      Symbol 

      Dimension In Millimeters 

      Dimension In Inches 

      Min 

      Nom 

      Max 

      Min 

      Nom 

      Max 

      E

      9.960

      10.160

      10.360

      0.392

      0.400

      0.408

      E1

      9.840

      10.040

      10.240

      0.387

      0.395

      0.403

      E2

      6.800

      7.000

      7.200

      0.268

      0.276

      0.283

      A

      4.600

      4.700

      4.800

      0.181

      0.185

      0.189

      A1

      2.440

      2.540

      2.640

      0.096

      0.100

      0.104

      A2

      2.660

      2.760

      2.860

      0.105

      0.109

      0.113

      A3

      0.600

      0.700

      0.800

      0.024

      0.028

      0.031

      c

      -

      0.500

      -

      -

      0.020

      -

      D

      15.780

      15.870

      15.980

      0.621

      0.625

      0.629

      D1

      8.970

      9.170

      9.370

      0.353

      0.361

      0.369

      H1

      6.500

      6.700

      6.800

      0.256

      0.264

      0.268

      e

      2.54BSC

      0.10BSC

      ФP

      3.080

      3.180

      3.280

      0.121

      0.125

      0.129

      ФP1

      1.400

      1.500

      1.600

      0.055

      0.059

      0.063

      ФP2

      0.900

      1.000

      1.100

      0.035

      0.039

      0.043

      ФP3

      0.100

      0.200

      0.300

      0.004

      0.008

      0.012

      L

      12.780

      12.980

      13.180

      0.503

      0.511

      0.519

      L1

      2.970

      3.170

      3.370

      0.117

      0.125

      0.133

      L2

      0.830

      0.930

      1.030

      0.033

      0.037

      0.041

      Q1

      3o

      5o

      7o

      3o

      5o

      7o

      Q2

      43o

      45o

      47o

      43o

      45o

      47o

      b1

      1.180

      1.280

      1.380

      0.046

      0.050

      0.054

      b2

      0.760

      0.800

      0.840

      0.030

      0.031

      0.033

      b3

      -

      -

      1.420

      -

      -

      0.056

       

       

      • 電話:0575-88125156
      • 郵箱:txkj@s-txkj.com
      • 地址:浙江省紹興市解放大道669號巨星大廈5樓

      Copyright ? 2022 紹興市騰芯電子科技有限公司 | 浙ICP備2021037681號-1

      欧美体内she精视频下载专区