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      產品型號:NS3407

      產品介紹

       

      Main Product Characteristics: 

       

      Features and Benefits 

      ? Standard Turbo MOSFET process technology.

      ? Optimized the cell structure.

      ? Low on-resistance and low gate charge.

      ? Featuring low switching and drive losses.

      ? Fast switching and reverse body recovery.

      ? High ruggedness and robustness.

       

      Description 

       

      The ST series products utilizes Tengxin’s outstanding standard turbo process and packaging techniques to achieve ultral low on-resistance and low gate charge and to provide the industry’s best-in-class performance.

      These features make this series products extremely efficient, temperature characteristics and reliable for use in power management, synchronous rectification, battery protection, load switch and a wide variety of other applications.

       

      Absolute Maximum Ratings (TA=25°C unless otherwise specified)

      Parameter 

      Symbol 

      Max. 

      Unit 

      Drain-Source Voltage

      VDS

      -30

      V

      Gate-to-Source Voltage

      VGS

      ± 20

      V

      Continuous Drain Current, @ Steady-State 1

      ID @ TA = 25°C

      -4.1

      A

      Continuous Drain Current, @ Steady-State

      ID @ TA  = 100°C

      -3.2

      A

      Pulsed Drain Current 2

      IDM

      -15

      A

      Power Dissipation

       

      PD @TA = 25°C

      1.2

      W

      Linear Derating Factor

      0.0096

      W/°C

      Junction-to-Ambient (PCB Mounted, Steady-State) 3

      RθJA

      105

      °C/W

      Operating Junction and Storage Temperature Range

      TJ /TSTG

      -55 to + 150

      °C

       

      Electrical Characteristics (TA=25°C unless otherwise specified)

      Parameter 

      Symbol 

      Conditions 

      Min. 

      Typ. 

      Max. 

      Unit 

      Drain-to-Source Breakdown

      Voltage

      V(BR)DSS

      VGS=0V, ID=-250μA

      -30

      -

      -

      V

       

      Drain-to-Source Leakage Current

       

      IDSS

      VDS=-30V, VGS=0V

      -

      -

      -1

       

      μA

      TJ=125°C

      -

      -

      -50

       

      Gate-to-Source Forward Leakage

       

      IGSS

      VGS=20V

      -

      -

      100

       

       

      nA

      VGS= -20V

      -

      -

      -100

       

      Static Drain-to-Source On- Resistance

       

      RDS (on)

      VGS=-10V, ID=-4.1A

      -

      46.5

      56

       

      VGS=-4.5V, ID=-3.5A

      -

      53

      66

      Gate Resistance

      Rg

      ƒ=1MHz

      -

      4.2

      -

      Ω

      Gate Threshold Voltage

      VGS (th)

      VDS=VGS, ID=-250μA

      -1.0

      -1.6

      -2.4

      V

      Forward Transconductance

      gfs

      VDS=5V, ID=-3.0A

      -

      11

      -

      S

      Input Capacitance

      Ciss

       

       

      VGS=0V VDS=-15V

      ƒ=1MHz

      -

      580

      -

       

       

      pF

      Output Capacitance

      Coss

      -

      98

      -

      Reverse transfer capacitance

      Crss

      -

      74

      -

      Total Gate Charge

      Qg

       

      ID=-4.1A, VDS=-15V, VGS=-10V

      -

      6.8

      -

       

       

      nC

      Gate-to-Source Charge

      Qgs

      -

      1.0

      -

      Gate-to-Drain("Miller") Charge

      Qgd

      -

      1.4

      -

      Turn-on Delay Time

      td(on)

       

      VGS=-10V, VDS=-15V,

       

      ID=-1A, RGEN=2.5Ω

      -

      14

      -

       

       

       

      nS

      Rise Time

      tr

      -

      61

      -

      Turn-Off Delay Time

      td(off)

      -

      19

      -

      Fall Time

      tf

      -

      10

      -

      Source-Drain Ratings and Characteristics 

      Parameter 

      Symbol 

      Conditions 

      Min. 

      Typ. 

      Max. 

      Unit 

      Continuous Source Current

      (Body Diode)

      IS

      MOSFET symbol showing

      the integral reverse p-n junction diode.

      -

      -

      -4.1

      A

      Pulsed Source Current (Body

      Diode)

      ISM

      -

      -

      -15

      A

      Diode Forward Voltage

      VSD

      IS=-4.1A, VGS=0V

      -

      -0.8

      -1.2

      V

       

      Notes 

      1. Pulse test: Pulse Width≤300us, Duty cycle ≤2%.

      2. Repetitive rating; pulse width limited by max. junction temperature.

      3. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch.

       

      Typical Electrical and Thermal Characteristic Curve



      Test Circuit & Waveform 


      Package Outline Dimensions SOT-23 


       

      Symbol

      Dimensions In Millimeters

      Dimensions In Inches

      MAX

      MIN

      MAX

      MIN

      A

      1.150

      0.900

      0.045

      0.035

      A1

      0.100

      0.000

      0.004

      0.000

      A2

      1.050

      0.900

      0.041

      0.035

      b

      0.500

      0.300

      0.020

      0.012

      c

      0.150

      0.080

      0.006

      0.003

      D

      3.000

      2.800

      0.118

      0.110

      E

      1.400

      1.200

      0.055

      0.047

      E1

      2.550

      2.250

      0.100

      0.089

      e

      0.95 TYP.

      0.037 TYP.

      e1

      2.000

      1.800

      0.079

      0.071

      L

      0.55 REF.

      0.022 REF.

      L1

      0.500

      0.300

      0.020

      0.012

      L2

      0.25 TYP.

      0.01 TYP.

      θ


       

       

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